PE2312
Dual Enhancement Mode Power MOSFET (N- and P- Channel)
DESCRIPTION
The PE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
(6)D1
(1)G1
(3)G2
(4)D2
GENERAL FEATURES
● P-Channel VDS = -20V,ID =...
