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PE606DT
MOSFET
Description
PE606DT Dual N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 30A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source
Voltage
VDS 30 Gate-Source
Voltage
VGS ±20 Continuous Drain Current3 Pulsed Drain Curr...
UNIKC
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