P-Channel Enhancement Mode Power MOSFET
Description
PE60P50
P-Channel Enhancement Mode Power MOSFET
Description
The PE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
● VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterize...
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