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PE614DX
MOSFET
Description
PE614DX Dual N-Channel Enhancement Mode
MOSFET
PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 12.5mΩ @VGS = 4.5V ID 30A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source
Voltage
VGS ±10 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipat...
UNIKC
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