N-Channel MOSFET
Description
PFU7N60EG / PFD7N60EG
Green Package
FEATURES
Originative New Design
PFU7N60EG / PFD7N60EG
600V N-Channel MOSFET
100% EAS Test
Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 17 nC (Typ.)
BVDSS = 600 V RDS(on) = 1.20 Ω
Drain
Gate
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Extended Safe ...
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