| Part Number | PHB14NQ20T |
| Manufacturer | NXP |
| Title | TrenchMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resista... |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 14 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelop... |
| Datasheet |
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