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PHB18NQ10T

NXP

N-channel TrenchMOS transistor


Description
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK REFERENCE DATA d FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power tra...



NXP

PHB18NQ10T

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