• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 29 A g RDS(ON) ≤ 63 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Th...
PHB30NQ15T PDF File
