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PHB36N06E

Part Number PHB36N06E
Manufacturer NXP
Title PowerMOS transistor
Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for...
Features Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board ...

File Size 55.07KB
Datasheet PHB36N06E PDF File







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