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PHD3055E

NXP

Transistor


Description
Philips Semiconductors Product specification PowerMOS transistor PHD3055E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Int...



NXP

PHD3055E

PDF File PHD3055E PDF File


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