| Part Number | PHD5N20E |
| Manufacturer | NXP |
| Title | PowerMOS transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capab... |
| Features |
ar derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50... |
| File Size | 55.03KB |
| Datasheet |
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