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PHP1N60E

NXP
Part Number PHP1N60E
Manufacturer NXP (https://www.nxp.com/)
Title PowerMOS transistor
Description N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage...
Features lse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. -55 MAX. 600 600 30 1.9 1.2 7.6 1.9 7.6 ...

Published Mar 22, 2005
Datasheet PDF File PHP1N60E PDF File


PHP1N60E
PHP1N60E


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