Part Number | PHP1N60E |
Manufacturer | NXP (https://www.nxp.com/) |
Title | PowerMOS transistor |
Description | N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage... |
Features |
lse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. -55 MAX. 600 600 30 1.9 1.2 7.6 1.9 7.6 ... |
Published | Mar 22, 2005 |
Datasheet | PHP1N60E PDF File |