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PMDT290UNE

nexperia
Part Number PMDT290UNE
Manufacturer nexperia
Description dual N-channel MOSFET
Published Jul 28, 2019
Detailed Description PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1. General description Dual...
Datasheet PDF File PMDT290UNE PDF File

PMDT290UNE
PMDT290UNE

Overview
PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET 28 December 2022 Product data sheet 1.
General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection up to 2 kV 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
5 V; Tam...


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