Dual N-channel uTrenchMOS ultra low level FET
Description
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PMGD400UN
Dual N-channel µTrenchMOS™ ultra low level FET
MBD128
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% s...
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