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PMV27UPEA

nexperia
Part Number PMV27UPEA
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMV27UPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1. General description P-channel enhancemen...
Datasheet PDF File PMV27UPEA PDF File

PMV27UPEA
PMV27UPEA

Overview
PMV27UPEA 20 V, P-channel Trench MOSFET 30 October 2015 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability: Ptot = 980 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM • AEC-Q101 qualified 3.
Applications • LED driver • Power management • High-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-so...


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