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PMZB950UPE

NXP Semiconductors
Part Number PMZB950UPE
Manufacturer NXP Semiconductors
Description P-channel Trench MOSFET
Published Aug 23, 2014
Detailed Description PMZB950UPE 28 July 2014 SO T8 83 B 20 V, P-channel Trench MOSFET Product data sheet 1. General description P-channe...
Datasheet PDF File PMZB950UPE PDF File

PMZB950UPE
PMZB950UPE

Overview
PMZB950UPE 28 July 2014 SO T8 83 B 20 V, P-channel Trench MOSFET Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.
0 × 0.
6 × 0.
37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.
02 Ω 3.
Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4.
Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick refer...


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