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PSMN4R3-30PL Datasheet

Part Number PSMN4R3-30PL
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN4R3-30PL DatasheetPSMN4R3-30PL Datasheet (PDF)

  PSMN4R3-30PL   PSMN4R3-30PL
PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switiching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 103 W Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 5.






Part Number PSMN4R3-30PL
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel MOSFET
Datasheet PSMN4R3-30PL DatasheetPSMN4R3-30PL Datasheet (PDF)

  PSMN4R3-30PL   PSMN4R3-30PL
www.DataSheet.co.kr PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switiching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C.






N-channel MOSFET

PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Load switiching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 103 W Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 14; see Figure 15 - 5.



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