PSMN4R3-30PL Datasheet
PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
Rev. 01 — 16 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC converters Load switiching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
- - 103 W
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
- 5.
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PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
Rev. 01 — 16 June 2009 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC converters Load switiching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C.
N-channel MOSFET
PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
Rev. 01 — 16 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC converters Load switiching
Motor control Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
- - 103 W
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
- 5.
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