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PTFB213004F

Part Number	PTFB213004F
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistor
Published	Nov 27, 2016
Datasheet	PTFB213004F PDF File

Features

include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.

PTFB213004F Package H-37275-6/2

ACP Up & Low (dBc) Drain Efficiency (%)

Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170...

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