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R6520ENZ
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor R6520ENZ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source
Voltage
- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 205mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and genera...
INCHANGE
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