Power MOSFET. R8005ANJFRG Datasheet

R8005ANJFRG Datasheet PDF


Part Number

R8005ANJFRG

Description

Nch 800V 5A Power MOSFET

Manufacture

ROHM

Total Page 14 Pages
Datasheet
Download R8005ANJFRG Datasheet



R8005ANJFRG
R8005ANJ FRG
  Nch 800V 5A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
800V
2.1Ω
±5A
120W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Parallel use is easy.
4) Pb-free plating ; RoHS compliant
5) AEC-Q101 qualified
lOutline
TO-263S
SC-83
LPT(S)
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R8005ANJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
800 V
Continuous drain current (Tc = 25°C)
ID*1 ±5 A
Pulsed drain current
IDP*2 ±10 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 2.5 A
Avalanche energy, single pulse
EAS*3
1.66 mJ
Power dissipation (Tc = 25°C)
PD 120 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170920 - Rev.001    

R8005ANJFRG
R8005ANJ FRG
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 1.04 /W
- - 80 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 800V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 2.5A
RDS(on)*4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
800 - - V
   
- - 100 μA
---
- - ±100 nA
3.0 - 5.0 V
   
- 1.6 2.1 Ω
- 3.8 -
- 7.6 - Ω
                                                                                         
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
20170920 - Rev.001




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