MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HHF1
9.1+/-0.7 1.3+/-0.4 3.6+/-0.2
Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING
3.2+/-0.4
4.8MAX
9+/-0.4
High power gain: Pout>6W, Gp>16d...
