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RJK03N5DPA

Renesas Technology

Built in SBD N Channel Power MOS FET


Description
RJK03N5DPA 30V, 45A, 2.9mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0786EJ0200 Rev.2.00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package ...



Renesas Technology

RJK03N5DPA

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