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RJK0406JPE

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Silicon N-Channel MOS FET


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RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.65 m typ.  High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings I...



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RJK0406JPE

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