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RJK0451DPB
Silicon N Channel Power MOS FET
Description
RJK0451DPB 40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0073EJ0200 Rev.2.00 Apr 09, 2013 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package co...
Renesas Technology
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