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RJK0851DPB

Renesas Technology

Silicon N Channel Power MOS FET

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RJK0851DPB 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Functions  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package cod...


Renesas Technology

RJK0851DPB

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