N-Channel IGBT
Description
Preliminary Datasheet
RJP60F5DPM
600 V - 40 A - IGBT High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology High speed switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PF...
Similar Datasheet
