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RJP65S08DWA
IGBT
Description
Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features Low collector to emitter saturation
voltage
VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08...
Renesas
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