MOSFET. RRS090P03FRA Datasheet

RRS090P03FRA Datasheet PDF


Part RRS090P03FRA
Description MOSFET
Feature RRS090P03FRA   Pch -30V -9A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD -30V 15.4mΩ ±9A 2..
Manufacture ROHM
Datasheet
Download RRS090P03FRA Datasheet


RRS090P03FRA   Pch -30V -9A Power MOSFET    Datasheet VDSS RRS090P03FRA Datasheet




RRS090P03FRA
RRS090P03FRA
  Pch -30V -9A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
-30V
15.4mΩ
±9A
2.0W
lFeatures
1) Low on-resistance
2) Small Surface Mount Package (SOP8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) AEC-Q101 Qualified
lOutline
SOP8
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
12
2500
Taping code
TB
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RRS090P03
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30 V
Continuous drain current
ID ±9 A
Pulsed drain current
IDP*1 ±36 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 2.0 W
PD*3 1.4 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20161025 - Rev.001    



RRS090P03FRA
RRS090P03FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = -1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = -30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = -10V, ID = -1mA
 ΔVGS(th)   ID = -1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = -10V, ID = -9.0A
RDS(on)*4 VGS = -4.5V, ID = -4.5A
VGS = -4.0V, ID = -4.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = -10V, ID = -9A
Values
Unit
Min. Typ. Max.
-30 - - V
- -24.1 - mV/
- - -1 μA
- - ±10 μA
-1.0 - -2.5 V
- 3.3 - mV/
- 11.0 15.4
- 15.0 21.0 mΩ
- 17.0 24.0
- 2.7 -
Ω
10 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20161025 - Rev.001






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