RTAN430M Datasheet





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RTAN430M Datasheet - TRANSISTOR

RTAN430M   RTAN430M  

Datasheet: RTAN430M datasheet

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Description: RTAN430X SERIES TRAwNwS wIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION SILICON NPN EPITAXIA L TYPE FEATURE ・Built-in bias resist or (R1=4.7kΩ) ・Small package for eas y mounting. ・High reverse hFE ・Smal l collector to emitter saturation volta ge. VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0 .5mA) ・Low on Resistance Ron=0.80Ω (TYP.)(@VI=5V) APPLICATION muting c ircuit , switching circuit OUTLINE DRA WING RTAN430T2 (PRELIMINARY) 0.2 0.8 0. 2 Unit:mm RTAN430M 2.1 0.425 1.25 0. 425 0.25 2.0 1.3 0.65 0.65 0.3 ① ③ ① ②③ 1.2 0.8 0.4 0.4 0.9 0.7 0~0.1 0.15 0.5 EQUIVALENT CIRCU IT R1 B (IN) C (OUT) E (GND) JEITA, JEDEC:- ISAHAYA:T-USM TERMINAL CONNECTOR ①:BASE ②:EMITTER ③:COLLECTOR RTAN430U 1.6 0.4


Manufacture Part Number Description

Isahaya

RTAN430M

TRANSISTOR




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