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█40V,120A,Rds(on)(typ)=3mΩ @Vgs=10V Rds(on)(typ)=3.5mΩ @Vgs=4.5V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology....

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