SCT10N120AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
Features
HiP247
3 2 1
D(2, TAB)
AEC-Q101 qualified Very tight variation of on-resistance vs. temperature Very high operating temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance
Appl...
