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SCTHS200N120G3AG - STMicroelectronics

SCTHS200N120G3AG - STMicroelectronics

SCTHS200N120G3AG - STMicroelectronics

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NG3DS2PS1D4 This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, sy.

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