• AEC-Q101 qualified 1
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency Applications
• Main inverter (electric traction)
• DC/DC ...
SCTHS250N65G2G PDF File
| Part Number | SCTHS250N65G2G |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Automotive-grade silicon carbide Power MOSFET |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
| Features |
Order code
23
SCTHS250N65G2G
VDS 650 V
RDS(on) typ. 8.0 mΩ
ID 250 A
• AEC-Q101 qualified 1 • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC ... |
| Published | Jun 26, 2023 |
| Datasheet |
SCTHS250N65G2G PDF File
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