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■ RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain
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● { 3. Source General Description This Power MOSFET is produced using Semiwell’s...
SFF4N60 PDF File
