GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 485 P
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
5.0 4.2
Cathode 3.85 3.35
ø5.1 ø4.8
5.9 5.5
1.8 1.2
29 27
1.0 0.5 Chip position
0.6 0.4
fex06306
GEX06306
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q GaAIAs-IR...
