Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.)
1
SFW/I9614
BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.6 A
D2-PAK
2
I2-PAK
1 3 2 3
1. Gate 2. Drain 3. Sou...
Similar Datasheet