Silicon Carbide
SJDP120R085
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) typical of 0.075 Ω
- Voltage Controlled
- Low Gate Charge - Low Intrinsic Capacitance
4
Product Summary
BVDS RDS(ON)max
ETS,typ
1200 0.0...
