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SJMN190R65B

N-Channel Super Junction MOSFET

Description

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.19Ω (Max.)  Ultra low gate charge: Qg=20nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-263 ...

KODENSHI KOREA

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