AMPLIFIERS. SN10503 Datasheet

SN10503 Datasheet PDF


Part SN10503
Description HIGH-SPEED RAIL-TO-RAIL OUTPUT VIDEO AMPLIFIERS
Feature DBV-5 D-8 DGN-8 DGK-8 D-14 PWP-14 SN10501 SN10502 SN10503 www.ti.com ..........................
Manufacture etcTI
Datasheet
Download SN10503 Datasheet


DBV-5 D-8 DGN-8 DGK-8 D-14 PWP-14 SN10501 SN10502 SN105 SN10503 Datasheet




SN10503
DBV-5
D-8
DGN-8 DGK-8
D-14
PWP-14
SN10501
SN10502
SN10503
www.ti.com .................................................................................................................................................. SLOS408B – MARCH 2003 – REVISED JANUARY 2009
HIGH-SPEED RAIL-TO-RAIL OUTPUT VIDEO AMPLIFIERS
FEATURES
1
2 High Speed
– 100 MHz Bandwidth (–3 dB, G = 2)
– 900 V/s Slew Rate
Excellent Video Performance
– 50 MHz Bandwidth (0.1 dB, G = 2)
– 0.007% Differential Gain
– 0.007 Differential Phase
Rail-to-Rail Output Swing
– VO = –4.5 / 4.5 (RL= 150 )
High Output Drive, IO = 100 mA (typ)
Ultralow Distortion
– HD2 = –78 dBc (f = 5 MHz, RL = 150 )
– HD3 = –85 dBc (f = 5 MHz, RL = 150 )
Wide Range of Power Supplies
– VS = 3 V to 15 V
APPLICATIONS
Video Line Driver
Imaging
DVD / CD ROM
Active Filtering
General Purpose Signal Chain Conditioning
DESCRIPTION
The SN1050x family is a set of rail-to-rail output
single, dual, and triple low-voltage, high-output swing,
low-distortion high-speed amplifiers ideal for driving
data converters, video switching, or low distortion
applications. This family of voltage-feedback
amplifiers can operate from a single 15-V power
supply down to a single 3-V power supply while
consuming only 14 mA of quiescent current per
channel. In addition, the family offers excellent ac
performance with 100-MHz bandwidth, 900-V/µs slew
rate and harmonic distortion (THD) at –78 dBc at
5 MHz.
DEVICE
SN10501
SN10502
SN10503
DESCRIPTION
Single
Dual
Triple
VIDEO DRIVE CIRCUIT
VS+
Video In
75
+
10 µF 0.1 µF
5
3
+
4
SN10501
1 75
2
75
VS− + 10 µF 0.1 µF
VO
1.43 k
1.43 k
6.3
VO = 0.1 VPP
6.2 −0.1 dB at 49 MHz
6.1
6.0
5.9 VO = 2 VPP
5.8 −0.1 dB at 51 MHz
5.7
5.6 Gain = 2
5.5 RL = 150 to GND
5.4
VS = ±5 V
RF = 1.43 k
5.3
100 k
1M
10 M
100 M
f − Frequency − Hz
1G
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
owerPAD is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2009, Texas Instruments Incorporated



SN10503
SN10501
SN10502
SN10503
SLOS408B – MARCH 2003 – REVISED JANUARY 2009 .................................................................................................................................................. www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
operating free-air temperature range unless otherwise (1)
Supply voltage, VS
Input voltage, VI
Output current, IO
Differential input voltage, VID
Continuous power dissipation See Dissipation Rating Table
Maximum junction temperature, TJ
Maximum junction temperature, continuous operation, longterm reliability, TJ(2)
Storage temperature range, Tstg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
UNIT
16.5 V
±VS
150 mA
4V
150°C
125°C
–65°C to 150°C
300°C
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
PACKAGE
DBV (5)
D (8)
D (14)
DGK (8)
DGN (8)(3)
PWP (14)(3)
PACKAGE DISSIPATION RATINGS
θJC(°C/W) (1)
55
θJA(°C/W)
255.4
POWER RATING(2)
TA 25°C
TA = 85°C
391 mW
156 mW
38.3 97.5
1.02 W
410 mW
26.9 66.6
1.5 W
600 mW
54.2 260
385 mW
154 mW
4.7 58.4
1.71 W
685 mW
2.07 37.5
2.67 W
1.07 W
(1) This data was taken using the JEDEC standard High-K test PCB.
(2) Power rating is determined with a junction temperature of 125°C. This is the point where distortion
starts to substantially increase. Thermal management of the final PCB should strive to keep the
junction temperature at or below 125°C for best performance and long term reliability.
(3) The SN10501, SN10502, and SN10503 may incorporate a PowerPAD™ on the underside of the chip.
This acts as a heatsink and must be connected to a thermally dissipating plane for proper power
dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing
the PowerPAD™ thermally enhanced package.
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Copyright © 2003–2009, Texas Instruments Incorporated
Product Folder Link(s): SN10501 SN10502 SN10503






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