State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
High-Impedance State During Power Up and
Power Down
3-State True Outputs Drive Bus Lines or
Buffer-Memory Address Registers
Full Parallel Access for Loading Package Options In...
