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SNN0310Q

Part Number	SNN0310Q
Manufacturer	KODENSHI KOREA
Description	Advanced N-Ch Trench MOSFET
Published	Jan 24, 2017
Detailed Description	SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features  Max. RDS(ON) = 150m at VGS = 1...
Datasheet	SNN0310Q PDF File

Overview

SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET Features  Max.
RDS(ON) = 150m at VGS = 10V, ID = 2A  Low gate charge: Qg=18nC (Typ.
)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0310Q SNN0310Q SOT-223 D SOT-223 Marking Information SNN0310Q YWW Column 1: Device Code Column 2: Production Information e.
g.
) YWW -.
Y: Year Code -.
WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * S...

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