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SP6719 Transistor Datasheet PDFN-Channel Logic Level Enhancement Mode Field Effect Transistor N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Part Number | SP6719 |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | SP6719Green
Product
Sa mHop Microelectr onics C orp. N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1. 0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 12. 5 @ VGS=10V 60V 11A 19 . 0 @ VGS=4. 5V FEATURES Super high dens e cell design for low RDS(ON). Rugged a nd reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIM UM RATINGS (TA=25°C unless otherwise n oted) Symbol Parameter VDS Drain-Sour ce Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single P ulse Avalanche Energy d PD Maximum Po wer Dissipation T . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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| Part Number | SP6719 |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | SP6719Green
Product
Sa mHop Microelectr onics C orp. N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1. 0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 12. 5 @ VGS=10V 60V 11A 19 . 0 @ VGS=4. 5V FEATURES Super high dens e cell design for low RDS(ON). Rugged a nd reliable. Suface Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIM UM RATINGS (TA=25°C unless otherwise n oted) Symbol Parameter VDS Drain-Sour ce Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C TA=70°C IDM -Pulsed a c EAS Single P ulse Avalanche Energy d PD Maximum Po wer Dissipation T . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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