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SPD02N80C3
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor SPD02N80C3,ISPD02N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.7Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-S...
INCHANGE
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