SPN2322 Datasheet


(PDF) SPN2322 Datasheet, Equivalent, Dual N-Channel Enhancement Mode MOSFET

SPN2322
Dual N-Channel Enhancement Mode MOSFET

DESCRIPTION
The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed .
FEATURES  20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V  20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V  20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V  Super high density cell design for extremely low
RDS (ON)  Exceptional on-resistance and maximum DC
current capability  TDFN2X2-6L package design

APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter
PIN CONFIGURATION(TDFN2X2 –6L)

PART

Manufacture Part Number Description PDF

SYNC POWER
SPN2322 Dual N-Channel Enhancement Mode MOSFET
SPN2322 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
SPN2322




Alternate Search Terms
SPN2322 datasheet SPN2322 component SPN2322 integrated circuit SPN2322 schematic SPN2322 application note PN2322 N2322 2322 SPN232 SPN23 SPN2

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