SSC8015GS6
P-Channel Enhancement Mode MOSFET
Features
VDS
VGS
-16V ±12V
RDSon TYP
25mR@-4V5 33mR@-2V5
ID -4.5A
General Description
The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications.
Applications
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