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SSC8066GS6

AFSEMI

N-Channel Enhancement Mode MOSFET


Description
SSC8066GS6 N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 45mR@10V 80mR@4V5 ID 3A  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resista...



AFSEMI

SSC8066GS6

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