SSC80A2GT8
N-Channel Enhancement Mode MOSFET
Features
VDS VGS 100V ±20V
RDSon TYP 80mR@10V 135mR@4V5
ID 6A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices D...
