SSC8120GN1
N-Channel Enhancement Mode MOSFET
Features
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 0.7A
ESD 1.2K
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery ...
