SSC8326GS1
Dual N-Channel Enhancement Mode MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 20mR@4V5 22mR@3V8 24mR@2V5
ID 6A
General Description
This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is...
