SSC8LA0GS1
N-Channel Enhancement Mode MOSFET
Features
VDS 100V
VGS ±20V
RDSon TYP 9.5mR@10V 13.5mR@4V5
ID 14A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch Industrial and M...
